Hall effect, n-Ge, carrier board

Article no. 11802-01 | Type: Equipment & Accessories

Teachers/Professors , Students

Function and Applications

In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of nondoped semiconductors.

Equipment and technical data

  • Heatable carrier board with n-Ge-crystal, Pt100-Thermocouple, integrated heating and 4-mm-connection plugs.
  • Dimensions of crystal (mm): 20 x 10 x 1.
  • Spec. resistance: approx. 2.0-2.5 Ohm cm-
  • Max. crystal temperature: 170 °C.
  • Max. probe current: +/- 60 mA.
  • Dimensions of circuit board (mm): 73 x 70 x 3.
  • Weight: 0.03 kg

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Digital learning
(de) Bedienungsanleitung
1180100d .pdf
File size 0.69 Mb
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(de) Bedienungsanleitung
1180100d .pdf
File size 0.69 Mb
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(en) Operating instructions
1180100e .pdf
File size 1.28 Mb
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(de) FAQ
faq_11802-01 .pdf
File size 0.21 Mb
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