Hall effect, n-Ge, carrier board

Function and Applications

In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of nondoped semiconductors.

Equipment and technical data

• Heatable carrier board with n-Ge-crystal, Pt100-Thermocouple, integrated heating and 4-mm-connection plugs.
• Dimensions of crystal (mm): 20 x 10 x 1.
• Spec. resistance: approx. 2.0-2.5 Ohm cm-
• Max. crystal temperature: 170 °C.
• Max. probe current: +/- 60 mA.
• Dimensions of circuit board (mm): 73 x 70 x 3.
• Weight: 0.03 kg